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2025-06-09
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RADIATSIYAVIY NUQSONLAR BILAN LEGIRLANGAN MIKRO NOBIRJINSLI KREMNIY NAMUNASINI FOTOO'TKAZUVCHANLIGIGA TA'SIRI
Mirzarayimov Jaxongir Zokirjanovich
IIV Namangan akademik litseyi Umumta`lim fanlari kafedrasi boshlig’i f.-m.f.b.f.d., PhD
Sulaymonov Abdurakhmon Abdurashidovich
Fanlar akademiyasi yadro fizika institute Yadro energetikasi va yadroviy texnologiyalar laboratoriyasi katta ilmiy xodimi Texnika fanlari nomzodi
Keywords: fotodatchik, Fermi satx, p-n-tipli, solishtirma qarshilik, patensial to’siq, chuqur energetik satx, radiatsion nuqson, o’tkazuvchanlik zona.
Abstract
kremniy namunasida radiatsiyaviy nuqsonlarni hosil qilib arzon va tashqi tasirlarga sezgir termo va foto datchiklarni yaratish yarimo‘tkazgichlar fizikasi va texnologiyasining dolzarb vazifasi hisoblanadi.
Ushbu ishda Xoll koeffitsienti usuli bilan namunalarning solishtirma qarshiligi, harakatchanligi, kontsentratsiyasi va statsionar fotooʼtkazuvchanlik metodi bilan zaryad tashuvchilarning yashash vaqti aniqlangan.
Ushbu ishda kompensirlangan monokristall kremniy materialni olish radiatsiyaviy nurlantirish texnologiyasi usulidan foydalaniladi yaniy kremniy monokristalini tez neytronlar bilan nurlantirish orqali, bu namunaning fotoelektrik parametrlarini maqsadli o‘zgartirishga imkon beradi.
Texnologik maqsadlarda nurlantirish usullaridan foydalanish, bir tomondan, hosil bo‘lgan nuqsonlar tarkibini boshqarishni va boshqa tomondan, radiatsiyaviy texnologik jarayonini optimallashtirish yo‘llarini izlashni o‘z ichiga oladi.
References
1. Karimov M., Makhkamov Sh., Makhmudov Sh.A., Muminov R.A., Rakhmatov A.Z., Sulaimanov A.A., Tursunov N.A. Peculiarities of influence of radiation defects on photoconductivity of silicon irradiated by fast neutrons. (Applied Solar Energy, Allerton Press, Inc., 2010) vol. 46 (4), pp. 298-300.
2. Sh.A. Makhkamov, M.Yu. Tashmetov, Sh.A. Makhmudov, A.K. Rafikov, A.A. Sulaimonov. Диффузия атомов примеси родия в кремнии для датчиков // FRANCE international conference: “Scientific approach to the modern education system" Part 10, 5th December, - Pp. -95-98.y 2022
3. M. Yu. Tashmetov, Sh. A. Makhmudov, A. A. Sulaymonov, A. K. Rafikov, B. Zh. Abdurayimov. Photosensors Based on Neutron Doped Silicon // ISSN 0003-701X, Applied Solar Energy, 2019, Vol. 55, No. 1, pp. 71–73.
4. Sh Makhmudov, A Sulaymonov, A Rafikov, G Xudayberganova. Study of after diffusion regions in highly doped silicon // International scientific journal Science and Innovation, ISSN: 2181-3337, V-1, №6, October 9, 2022, - Pp. -402-404. https://doi.org/10.5281/zenodo.7178339
5. Каримов М., Махкамов Ш., Турсунов Н., Махмудов Ш.А., Сулаймонов А.А. Влияние быстрых нейтронов на электрофизические свойства ядерно-легированного кремния p-типа» // Известия вузов, Физика. – Томск. 2011. –Вып. 5 – С. 75-78.
6. M Karimov, Sh Makhkamov, NA Tursunov, Sh A Makhmudov, AA Sulaimonov. “The effect of fast neytrons on the electrophysical properties of nucler-doped p-silicon” // Russian Physics Journal 2011/10. vol 54. Pp589-593.
