DEPENDENCE OF THE RESIDENCE TIME OF CHARGE CARRIERS ON OXYGEN ATOMS IN SILICON DOPED WITH COPPER AND IRIDIUM. Multidisciplinary Journal of Science and Technology, [S. l.], v. 5, n. 10, p. 1068–1072, 2025. Disponível em: https://mjstjournal.com/index.php/mjst/article/view/5429. Acesso em: 16 jun. 2026.